Pushing the Limits of Inverse Lithography with Generative Reinforcement Learning

Haoyu Yang, Haoxing Ren
2/22/2026
cs.LGcs.AI

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Abstract

Inverse lithography (ILT) is critical for modern semiconductor manufacturing but suffers from highly non-convex objectives that often trap optimization in poor local minima. Generative AI has been explored to warm-start ILT, yet most approaches train deterministic image-to-image translators to mimic sub-optimal datasets, providing limited guidance for escaping non-convex traps during refinement. We reformulate mask synthesis as conditional sampling: a generator learns a distribution over masks conditioned on the design and proposes multiple candidates. The generator is first pretrained with WGAN plus a reconstruction loss, then fine-tuned using Group Relative Policy Optimization (GRPO) with an ILT-guided imitation loss. At inference, we sample a small batch of masks, run fast batched ILT refinement, evaluate lithography metrics (e.g., EPE, process window), and select the best candidate. On \texttt{LithoBench} dataset, the proposed hybrid framework reduces EPE violations under a 3\,nm tolerance and roughly doubles throughput versus a strong numerical ILT baseline, while improving final mask quality. We also present over 20\% EPE improvement on \texttt{ICCAD13} contest cases with 3$\times$ speedup over the SOTA numerical ILT solver. By learning to propose ILT-friendly initializations, our approach mitigates non-convexity and advances beyond what traditional solvers or GenAI can achieve.

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Cite this paper

@article{yang2026pushing,
  title  = {Pushing the Limits of Inverse Lithography with Generative Reinforcement Learning},
  author = {Haoyu Yang and Haoxing Ren},
  year   = {2026},
  eprint = {2602.19027},
  archivePrefix = {arXiv},
  url    = {http://arxiv.org/abs/2602.19027v1}
}

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